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FCA16N60N N-Channel MOSFET

FCA16N60N Description

FCA16N60N N-Channel MOSFET August 2009 TM SupreMOS FCA16N60N N-Channel MOSFET 600V, 16A, 0.170Ω .
The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it.

FCA16N60N Features

* RDS(on) = 0.17Ω ( Typ. )@ VGS = 10V, ID = 8A
* Ultra low gate charge ( Typ. Qg = 40.2nC)
* Low effective output capacitance
* 100% avalanche tested

FCA16N60N Applications

* D G G DS TO-3PN FCA Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted
* Symbol VDSS VGSS ID IDM www. DataSheet4U. net Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Ene

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N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FCA16N60N-like datasheet