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FCA20N60 - N-Channel MOSFET

General Description

SUPERFET MOSFET is onsemi’s first generation of high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Key Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 150 mW.
  • Ultra Low Gate Charge (Typ. Qg = 75 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 165 pF ).
  • 100% Avalanche Tested.
  • This Device is Pb.
  • Free.

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Datasheet Details

Part number FCA20N60
Manufacturer onsemi
File Size 267.06 KB
Description N-Channel MOSFET
Datasheet download datasheet FCA20N60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, SUPERFET) 600 V, 20 A, 190 mW FCA20N60 Description SUPERFET MOSFET is onsemi’s first generation of high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on− resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switch− ing performance, dv/dt rate and higher avalanche energy. Con− sequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 150 mW • Ultra Low Gate Charge (Typ. Qg = 75 nC) • Low Effective Output Capacitance (Typ. Coss(eff.