F12N60C - 600V N-Channel MOSFET

Fairchild Semiconductor

The F12N60C by Fairchild Semiconductor is a 600V N-Channel MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	F12N60C
Manufacturer	Fairchild Semiconductor
File Size	1.13 MB
Description	600V N-Channel MOSFET
Datasheet	F12N60C-FairchildSemiconductor.pdf
Additional preview pages of the F12N60C datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

12 A, 600 V, RDS(on) = 650 mΩ (Max. ) @ VGS = 10 V, ID = 6 A.
Low Gate Charge (Typ. 48 nC).
Low Crss (Typ. 21 pF).
100% Avalanche Tested D GDS TO-220F G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) VGSS EAS IAR EAR dv/dt Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Curren.

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Published: Feb 18, 2014 |