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F12-25R12KT4G - IGBT

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TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules F12-25R12KT4G EconoPACK™3ModulmitTrench/FeldstoppIGBT4undEmitterControlled4Diode EconoPACK™3modulewithtrench/fieldstopIGBT4andEmitterControlled4Diode IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues VorläufigeDaten PreliminaryData Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C VCES  1200 V Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 100°C, Tvj max = 175°C IC nom  25 A PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms ICRM  50 A Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot  160 W Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltag