55N10 FQA55N10

Fairchild Semiconductor

Description

FQA55N10 August 2000 QFET FQA55N10 100V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: 55N10
Manufacturer: Fairchild Semiconductor
File Size: 722.25 KB
Datasheet: 55N10_FairchildSemiconductor.pdf
Description: FQA55N10

Features

* 61A, 100V, RDS(on) = 0.026Ω @VGS = 10 V Low gate charge ( typical 75 nC) Low Crss ( typical 130 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G DS ! " " "

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55N10 FQA55N10 Fairchild Semiconductor

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