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55N20E MTY55N20E

55N20E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY55N20E/D Designer's TMOS E-FET .™ Power Field Effect Transistor N *Channel .

55N20E Features

* 25°C GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data Free Datasheet http://www.0PDF. com MTY55N20E VDS , DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) VGS, GATE
* TO

55N20E Applications

* in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Spe

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Datasheet Details

Part number
55N20E
Manufacturer
Motorola
File Size
175.62 KB
Datasheet
55N20E-Motorola.pdf
Description
MTY55N20E

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MTY55N20E Motorola
Motorola 55N20E-like datasheet