30N60A4D - HGT1N30N60A4D

Fairchild Semiconductor

Datasheet Details

Part number	30N60A4D
Manufacturer	Fairchild Semiconductor
File Size	181.19 KB
Description	HGT1N30N60A4D
Datasheet	30N60A4D_FairchildSemiconductor.pdf

of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching.

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Published: Apr 28, 2008 |