2N60B - 600V N-Channel MOSFET

Fairchild Semiconductor

The 2N60B by Fairchild Semiconductor is a 600V N-Channel MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	2N60B
Manufacturer	Fairchild Semiconductor
File Size	676.23 KB
Description	600V N-Channel MOSFET
Datasheet	2N60B_FairchildSemiconductor.pdf
Additional preview pages of the 2N60B datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V.
Low gate charge ( typical 12.5 nC).
Low Crss ( typical 7.6 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability D GS D2-PAK SSW Series GDS I2-PAK SSI Series G! D !.
◀▲.
! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, Tstg TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) -.

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Published: Jan 3, 2006 |