10N120BND Datasheet - Fairchild Semiconductor

10N120BND-FairchildSemiconductor.pdf

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Datasheet Details

Part number:

10N120BND

Manufacturer:

Fairchild Semiconductor

File Size:

109.80 KB

Description:

Hgtg10n120bnd.

10N120BND, HGTG10N120BND

10N120BND Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49290. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching appli

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10N120BND HGTG10N120BND Fairchild Semiconductor

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