EMP75N03HR Datasheet (Excelliance MOS) - N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMP75N03HR, N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) @VGS=10V RDSON (MAX.) @VGS=4.5V 7.5mΩ 10.5mΩ ID@TC=25°C 50A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMP75N03HR LIMITS UNIT Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID TC = 100 °C TA = 25 °C 50 35 A 12 Pulsed Dr