Datasheet Details
| Part number | EMP19K03HPC |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 423.10 KB |
| Description | Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet |
|
| Part number | EMP19K03HPC |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 423.10 KB |
| Description | Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet |
|
Q1 Q2 BVDSS RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 30V 6.6mΩ 8.8mΩ 30V 2.4mΩ 3.4mΩ ID @TC=25℃ 62A 171A ID @TA=25℃ 20A 38A Dual N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Q1 Q2 Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 TC =
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