The EMP31N03HQ by Excelliance MOS is a Single N-Channel Logic Level Enhancement Mode Field Effect Transistor. Below is the official datasheet preview.
| Part number | EMP31N03HQ |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 337.62 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet |
 EMP31N03HQ-ExcellianceMOS.pdf
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N-CH BVDSS 30 V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 3.1 mΩ 4.2 mΩ ID @TC=25℃ 97 A ID @TA=25℃ 21 A Single N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current TC = 25 °C TC = 100 °C ID 97 61 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID 21 17 IDM 316 Avalanc
📁 EMP31N03HQ Similar Datasheet
