Datasheet Details
| Part number | EMD50N15F |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 358.88 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet |
|
| Part number | EMD50N15F |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 358.88 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet |
|
BVDSS 150V RDSON (MAX.) 50mΩ ID 22A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID TC = 100 °C IDM Avalanche Current IAS Avalanche Energy L = 0.2mH, ID=18A, RG=25Ω EAS Repetitive Avalanche Energy2 L = 0.1mH EAR Power Dissipation TC = 2
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