EMD50N10F Datasheet - Excelliance MOS

EMD50N10F MOSFET

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 150V D RDSON (MAX.) 50mΩ ID 22A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain‐Source Voltage Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.2mH, ID=18A, RG=25Ω L = 0.

EMD50N10F Datasheet (200.97 KB)

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Datasheet Details

Part number:

EMD50N10F

Manufacturer:

Excelliance MOS

File Size:

200.97 KB

Description:

Mosfet.

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