EMBA2A10VS - Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

📥 Download Datasheet

EMBA2A10VS Datasheet Preview — Preview of EMBA2A10VS PDF

Datasheet Details

Part number	EMBA2A10VS
Manufacturer	Excelliance MOS
File Size	443.01 KB
Description	Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMBA2A10VS-ExcellianceMOS.pdf

EMBA2A10VS Product details

Description

N-CH BVDSS 100V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 100mΩ 150mΩ ID @TC=25℃ 9.0A ID @TA=25℃ 3.0A Dual N Channel MOSFET UIS、Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2

📁 EMBA2A10VS Similar Datasheet

EMB09P03A - P-Channel 30V MOSFET (VBsemi)
EMB10 - PNP Digital Transistors (Rohm)
EMB10FHA - PNP -100mA -50V Complex Digital Transistors (ROHM)
EMB11 - Dual Digital Transistors (Rohm)
EMB1412 - EMB1412 MOSFET Gate Driver (Rev. B) (ETCTI)
EMB1428Q - EMB1428Q Switch Matrix Gate Driver (Rev. A) (ETCTI)
EMB1432Q - EMB1432Q 60-V 14-Channel Battery Stack Module Analog Front End (Rev. D) (ETCTI)
EMB1433Q - EMB1433Q 60-V 14-Channel Battery Stack Protection Chip with Programmable Window Comparator Supports Multi-Module Battery Packs (Rev. B) (ETCTI)

Other Datasheets by Excelliance MOS

EMBA2A06HS - Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor
EMBA2N10A - N-Channel Logic Level Enhancement Mode Field Effect Transistor
EMBA2N10AS - N-Channel Logic Level Enhancement Mode Field Effect Transistor
EMBA0A10G - MOSFET
EMBA0N10A - N-Channel Logic Level Enhancement Mode Field Effect Transistor
EMBA0N10CS - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Published: Jun 23, 2024 |