Datasheet4U Logo Datasheet4U.com

EMBA2N10AS - N-Channel Logic Level Enhancement Mode Field Effect Transistor

📥 Download Datasheet

Datasheet Details

Part number EMBA2N10AS
Manufacturer Excelliance MOS
File Size 423.55 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMBA2N10AS Datasheet

📁 Similar Datasheet

  • EMB09P03A - P-Channel 30V MOSFET (VBsemi)
  • EMB10 - PNP Digital Transistors (Rohm)
  • EMB10FHA - PNP -100mA -50V Complex Digital Transistors (ROHM)
  • EMB11 - Dual Digital Transistors (Rohm)
  • EMB11 - Dual Digital Transistors (JCET)
  • EMB1412 - EMB1412 MOSFET Gate Driver (Rev. B) (ETCTI)
  • EMB1428Q - EMB1428Q Switch Matrix Gate Driver (Rev. A) (ETCTI)
  • EMB1432Q - EMB1432Q 60-V 14-Channel Battery Stack Module Analog Front End (Rev. D) (ETCTI)
  • EMB1433Q - EMB1433Q 60-V 14-Channel Battery Stack Protection Chip with Programmable Window Comparator Supports Multi-Module Battery Packs (Rev. B) (ETCTI)
  • EMB1499Q - EMB1499Q Bidirectional Current DC-DC Controller (Rev. B) (ETCTI)
Other Datasheets by Excelliance MOS
  • EMBA2N10A - N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMBA2A06HS - Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMBA2A10VS - Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMBA0A10G - MOSFET
  • EMBA0N10A - N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMBA0N10CS - N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMBA0N10F - MOSFET
  • EMBA0N10G - MOSFET

Full PDF Text Transcription

Click to expand full text
N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH BVDSS 100V RDSON (MAX.)@VGS=10V 100mΩ RDSON (MAX.)@VGS=4.5V 150mΩ ID @TC=25℃ 17A N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current L = 0.01mH Avalanche Energy L = 1.0mH Repetitive Avalanche Energy2 L = 0.
Published: |