EMB35C04A Datasheet - Excelliance MOS

EMB35C04A MOSFET

N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS RDSON (MAX.) N‐CH 40V 35mΩ P‐CH ‐40V 44mΩ D1 G1 ID 12A ‐9A S1 D2 G2 S2 EMB35C04A Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature R.

EMB35C04A Datasheet (208.86 KB)