Datasheet4U Logo Datasheet4U.com

EMB30P03A Datasheet - Excelliance MOS

EMB30P03A MOSFET

P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 30mΩ ID ‐22A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=‐12A, RG=25Ω L = 0.05mH Power Dissipa.

EMB30P03A Datasheet (210.65 KB)

Preview of EMB30P03A PDF
EMB30P03A Datasheet Preview Page 2 EMB30P03A Datasheet Preview Page 3

Datasheet Details

Part number:

EMB30P03A

Manufacturer:

Excelliance MOS

File Size:

210.65 KB

Description:

Mosfet.

📁 Related Datasheet

EMB30P03VAT P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMB30B03V MOSFET (Excelliance MOS)

EMB3 PNP Digital Transistors (Rohm)

EMB3 Dual Digital Transistors (JCET)

EMB32A03G Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMB32A03VA MOSFET (Excelliance MOS)

EMB32C03G MOSFET (Excelliance MOS)

EMB32C03V N & P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

TAGS

EMB30P03A MOSFET Excelliance MOS

EMB30P03A Distributor