EMB22A04G Datasheet (Excelliance MOS) - Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB22A04G, Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 40V RDSON (MAX.) 22mΩ ID 8A Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg EMB22A04G LIMITS ±20 8 7 32 2 1.