EMB21C03A Datasheet - Excelliance MOS

EMB21C03A MOSFET

EMB21C03A N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS RDSON (MAX.) N‐CH 30V 21mΩ P‐CH ‐30V 40mΩ D1 G1 D2 G2 ID 8A ‐6A S1 S2 UIS, 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate‐Source Voltage VGS N‐CH P‐CH V ±20 ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche .

EMB21C03A Datasheet (213.23 KB)