EMB17A03G Datasheet (Excelliance MOS) - Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB17A03G, Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 17mΩ ID 10A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMB17A03G LIMITS UNIT Gate‐Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C ID IDM 10 7 40 Avalanche Current IAS 12 Avalan