EMB17C03G Datasheet (Excelliance MOS) - N & P-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB17C03G, N & P-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB17C03G N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 30V ‐30V RDSON (MAX.) 17mΩ 20mΩ ID 10A ‐8A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate‐Source Voltage VGS N‐CH P‐CH V ±20 ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.