EMB12N04G - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMB12N04G
Manufacturer	Excelliance MOS
File Size	176.69 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMB12N04G Datasheet

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 40V D RDSON (MAX.) 12mΩ ID 12A G S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg EMB12N04G LIMITS ±20 12 10 48 2.5 1.6 ‐55 to 150 UNIT V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Junction‐to‐Ambient3 RJA 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ 350°C / W when mounted on a 1 in2 pad of 2 oz copper.

Published: Apr 26, 2017 |