EMB12N03V Datasheet (Excelliance MOS)

EMB12N03V, MOSFET

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 11.5mΩ ID 18.5A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH, ID=12A, RG=25Ω Repetitive Avalanche Energy2 L = 0.05mH Power Diss