EMB12N03V - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

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Datasheet Details

Part number	EMB12N03V
Manufacturer	Excelliance MOS
File Size	364.01 KB
Description	Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMB12N03V-ExcellianceMOS.pdf

EMB12N03V Product details

Description

N-CH BVDSS RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V ID @TC=25℃ 30V 11.5mΩ 16.0mΩ 39A ID @TA=25℃ 9.9A Single N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current TC = 25 °C TC = 100 °C ID 39 24 Continuous Drain Current TA = 25 °C TA = 70 °C ID 9.9 7.9 Pulsed Drain Current1 IDM 70 Avalanche C

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Published: Apr 26, 2017 |