EMB07N03V - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Overview

Excelliance MOS

Datasheet Details

Part number	EMB07N03V
Manufacturer	Excelliance MOS
File Size	364.35 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMB07N03V Datasheet
Additional preview pages of the EMB07N03V datasheet.

Product details

Description

N-CH BVDSS 30V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V ID @TC=25℃ ID @TA=25℃ 7.0mΩ 9.0mΩ 59A 13A Single N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 TC = 25 °C 59 Continuous Drain Current1 TC = 100 °C TA = 25 °C ID 39 13 TA = 70 °C 10 Pulsed Drain Current1 IDM 107 Avalanche Current1,4 IAS 33 Avalanche En

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Other Datasheets by Excelliance MOS

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Published: Apr 27, 2017 |