EMB04N06H Datasheet (Excelliance MOS) - N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB04N06H, N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB04N06H N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 4mΩ ID 84A G UIS, Rg 100% Tested S Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1,3 TC = 25 °C 84 ID TC = 100 °C 50 IDM 200 Avalanche Current IAS 65 Avalanche Energy L = 0.1mH, ID=65A, RG