EMB04N03HR - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Overview

Excelliance MOS

Datasheet Details

Part number	EMB04N03HR
Manufacturer	Excelliance MOS
File Size	325.46 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMB04N03HR Datasheet
Additional preview pages of the EMB04N03HR datasheet.

Product details

Description

N-CH BVDSS 30V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 4.0mΩ 5.0mΩ ID @TC=25℃ ID @TA=25℃ 138A 19A Single N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage Continuous Drain Current1 Continuous Drain Current1 Pulsed Drain Current1 Avalanche Current1,4 Avalanche Energy1,4 Repetitive Avalanche Energy2,4 TC = 25 °C TC = 100 °C TA = 25

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Published: Apr 26, 2017 |