EMB03P03H Datasheet (Excelliance MOS)

EMB03P03H, MOSFET

EMB03P03H P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 3.1mΩ ID ‐85A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ‐85 ID TC = 100 °C ‐65 IDM ‐260 Avalanche Current IAS ‐80 Avalanche Energy L = 0.1mH, ID=‐