EMB03N03V Datasheet (Excelliance MOS) - N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB03N03V, N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 3.0mΩ ID 37A N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C ID TA = 25 °C Pulsed Drain Current1 TC = 100 °C IDM Avalanche Current IAS Avalanche Energy L = 0.1mH, IAS =37A, RG=25Ω EAS Repetiti