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EIC1414-2 - Internally Matched Power FET

Features

  • 14.00.
  • 14.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.5 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 30% Power Added Efficiency -42 dBc IM3 at Po = 22.5 dBm SCL 100% Tested for DC, RF, and RTH.

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Datasheet Details

Part number EIC1414-2
Manufacturer Excelics Semiconductor
File Size 147.41 KB
Description Internally Matched Power FET
Datasheet download datasheet EIC1414-2 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com EIC1414-2 UPDATED 08/20/2007 14.00-14.50GHz 2-Watt Internally-Matched Power FET FEATURES • • • • • • • 14.00 –14.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.5 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 30% Power Added Efficiency -42 dBc IM3 at Po = 22.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 14.00-14.50GHz VDS = 10 V, IDSQ ≈ 550mA Gain at 1dB Compression f = 14.00-14.50GHz VDS = 10 V, IDSQ ≈ 550mA Gain Flatness f = 14.00-14.50GHz VDS = 10 V, IDSQ ≈ 550mA Power Added Efficiency at 1dB Compression f = 14.00-14.
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