The 20111 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 860 to 900 MHz.
Rated at 85 watts minimum output power, it may be used for both CW and PEP applications.
| Part number | PTB20111 |
|---|---|
| Manufacturer | Ericsson |
| File Size | 47.29 KB |
| Description | 85 Watts/ 860-900 MHz Cellular Radio RF Power Transistor |
| Datasheet |
 PTB20111 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| PTB23001X | NPN microwave power transistors | NXP |
| PTB23002U | NPN microwave power transistor | NXP |
| PTB23003X | NPN microwave power transistor | NXP |
| PTB23003X | NPN microwave power transistors | NXP |
| PTB23005X | NPN microwave power transistors | NXP |
| Part Number | Description |
|---|---|
| PTB20101 | 175 Watts P-Sync/ 470-860 MHz UHF TV Power Transistor |
| PTB20105 | 20 Watts/ 925-960 MHz Cellular Radio RF Power Transistor |
| PTB20125 | 100 Watts/ 1.8-2.0 GHz PCN/PCS Power Transistor |
| PTB20134 | 30 Watts/ 860-900 MHz Cellular Radio RF Power Transistor |
| PTB20135 | 85 Watts/ 925-960 MHz Cellular Radio RF Power Transistor |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
