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PTB20125 - 100 Watts/ 1.8-2.0 GHz PCN/PCS Power Transistor

Description

The 20125 is an NPN, push-pull RF power transistor intended for 26 Vdc class AB operation from 1.8 to 2.0 GHz.

Rated at 100 watts PEP minimum output power, it is specifically intended for operation as a final stage in CDMA or TDMA systems.

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Datasheet Details

Part number PTB20125
Manufacturer Ericsson
File Size 235.56 KB
Description 100 Watts/ 1.8-2.0 GHz PCN/PCS Power Transistor
Datasheet download datasheet PTB20125 Datasheet

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e PTB 20125 100 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20125 is an NPN, push-pull RF power transistor intended for 26 Vdc class AB operation from 1.8 to 2.0 GHz. Rated at 100 watts PEP minimum output power, it is specifically intended for operation as a final stage in CDMA or TDMA systems. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. • • • • • 100 Watts, 1.8–2.0 GHz Class AB Characteristics 40% Collector Efficiency at 100 Watts Gold Metallization Silicon Nitride Passivated Typical POUT, Gain & Efficiency (at P-1dB) vs.
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