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SHF-0289 - 1.0 Watt GaAs HFET

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Datasheet Details

Part number	SHF-0289
Manufacturer	ETC
File Size	529.98 KB
Description	1.0 Watt GaAs HFET
Datasheet	SHF-0289_ETC.pdf

SHF-0289 Product details

Description

Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package.

Features

Patented GaAs Heterostructure FET Technology.
+30dBm Output Power at 1dB Compression.
+46dBm Output IP3.
High Drain Efficiency: Up to 40% at Class AB.
13 dB Gain at 900MHz (.

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Other Datasheets by ETC

SHF-0186 - DC-12 GHz/ 0.5 Watt AlGaAs/GaAs HFET
SHF-0186K - DC-3 GHz/ 0.5 Watt AlGaAs/GaAs HFET
SHF-0589 - 0.05-3 GHz/ 2 Watt GaAs HFET

Published: Apr 8, 2005 |