Description
Stanford Microdevices’ SHF-0186K is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package.
Features
- Patented AlGaAs/GaAs Heterostructure FET
Technology
40
VDS=8V, IDQ=100mA
30
GMax(dB)
20 10 0 -10 0 2 4 6 8 10 12
Frequency (GHz)
Device Characteristics, T = 25ºC VDS = 8V, IDQ = 100 mA Maximum Available Gain Insertion Power Gain Gain Output 1 dB compression point Output Third Order Intercept Point Saturated Drain Current VDS = 3V, VGS = 0V Transconductance VDS = 3V, VGS = 0V Pinch-Off Voltage VDS = 3V, IDQ = 1mA Gate-to-Source Breakdown Voltage, Igs = 1.2mA Gate-to-Drain Breakdown V.
SHF-0186K_ETC.pdf
