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OT410T - NPN Silicon Phototransistor

Download the OT410T datasheet PDF. This datasheet also covers the OT410D variant, as both devices belong to the same npn silicon phototransistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • a domed lens and the OT410T a flat window.
  • TO - 46 Package.
  • Hermetically Sealed Device ideal for hostile environments High Sensitivity.
  • Dimensions in mm Specifications: Operating Temperature Range -55°C to 125°C.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (OT410D_ETC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number OT410T
Manufacturer Unknown Manufacturer
File Size 192.46 KB
Description NPN Silicon Phototransistor
Datasheet download datasheet OT410T Datasheet

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Part Number Description
OT410D NPN Silicon Phototransistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com NPN Silicon Phototransistor Type OT 410D and OT 410T The OT410 sensors consist of a high gain NPN silicon photo transistor mounted in hermetically sealed TO-46 package. These sensors are ideally suited for hostile environment operation. The OT410D features a domed lens and the OT410T a flat window. • TO - 46 Package • Hermetically Sealed Device ideal for hostile environments High Sensitivity • Dimensions in mm Specifications: Operating Temperature Range -55°C to 125°C PARAMETERS Light Current H = 1mW/cm2 OT 410D(T)-1 OT 410D(T)-2 OT 410D(T)-3 Dark Current VCE = 10V, H = 0 Collector Emitter Voltage Emitter Collector Voltage Saturation Voltage IC = 1mA Angular Response Rise or Fall Time RL = 100Ω V CC = 10V OT 410D OT 410T OT 410D-1 OT 410D-6 SYMBOL MIN. 3 (1.
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