G20N120 HGTG20N120

G20N120 Description

Semiconductor HGTG20N120E2 April 1995 34A, 1200V N-Channel IGBT .
The HGTG20N120E2 is a MOS gated, high voltage switch- ing device combining the best features of MOSFETs and bipolar transistors.

G20N120 Features

* 34A, 1200V
* Latch Free Operation
* Typical Fall Time - 780ns
* High Input Impedance

G20N120 Applications

* operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. The development type number for this device is TA49009. PACKAGING AVAILABILITY PART NUMBER PACKAGE HGTG20N120E2 TO-247 BRAND G2

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Datasheet Details

Part number: G20N120
Manufacturer: ETC
File Size: 166.89 KB
Datasheet: G20N120_ETC.pdf
Description: HGTG20N120

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HGTG20N120 ETC

ETC G20N120-like datasheet