BFR96 Datasheet (ETC) - N-P-N bipolar silicon RF transistor

BFR96, N-P-N bipolar silicon RF transistor

www.DataSheet4U.com BFR96 N-P-N bipolar silicon RF transistor in plastic package SOT-37 5.2max 5.5max 1.5max 9.0max 1.0max 1 5.5max 2 3 Pinouts: 1- Base, 2- Collector, 3-Emitter Ratings Symbol VCBO VCEO VEBO IC Ptot Parameter, unit Collector- base voltage, V Collector- emitter voltage, V Emitter- base voltage, V Collector current, mA Power dissipation, mW Limits 20 15 3 75 700 Characteristics (T A = 25°C) Symbol fT hFE ICBO GPS F CC Parameter, unit, test conditions Transition frequency