2N6441 Datasheet (ETC) - NPN SILICON MONOLITHIC MULTIPLE TRANSISTORS

2N6441, NPN SILICON MONOLITHIC MULTIPLE TRANSISTORS

2N6441 (SILICON) thru 2N6448 MULTIPLE SILICON ANNULAR MONOLITHIC TRANSISTORS designed for use as differential amplifiers, dual general-purpose amplifiers, front end detectors and temperature compensation" applications.

Excellent Temperature Tracking - 2N6445 thru 2N6448 "'IVBEl - VBE21 = 0.8 mVdc (Maxi @-55 to +250 C = 1.0 mVdc (Maxi @+25 to +1250 C Low Collector-Emitter Saturation Voltage - VCE(satl = 0.1 Vdc (Typl @ IC = 1.0 mAdc DC Current Gain Specified - 10 !l