2N5556 Datasheet (ETC) - SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS

2N5556, SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS

2N5556 (SILICON) thru 2N5558 SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Depletion Mode (Type A) devices designed for low-noise amplifier appl ications_ Low Noise Figure - NF =1.0 dB (Max) @ 100 Hz Low Gate Leakage Current - IGSS = 0.1 nAdc (Max) Low Input Capacitance - Ciss = 6.0 pF (Max) SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS TYPE A MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Total