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2N5551S - EPITAXIAL PLANAR NPN TRANSISTOR

KEC

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Datasheet Details

Part number	2N5551S
Manufacturer	KEC
File Size	351.90 KB
Description	EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet	2N5551S-KEC.pdf

2N5551S Product details

Features

High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max. ) VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max. ) IC=50mA, IB=5mA Low Noise : NF=8dB (Max. ).

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Published: Jun 21, 2016 |