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F50D1G41LB-66YG2ME, F50D1G41LB-50YG2M 1.8V 1 Gbit SPI-NAND Flash Memory

F50D1G41LB-66YG2ME Description

ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Power-up Ready Time Max Reset Busy Time Note: 1.x2 PROGR.
The serial electrical interface follows the industry-standard serial peripheral interface (SPI), providing a cost-effective non-volatile memory storag.

F50D1G41LB-66YG2ME Features

* Voltage Supply: 1.8V (1.7V~1.95V)
* Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit
* Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte
* Page Read Operation - Page Size: (2K + 64) Byte - Read from Cel

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: F50D1G41LB-66YG2ME, F50D1G41LB-50YG2M. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
F50D1G41LB-66YG2ME, F50D1G41LB-50YG2M
Manufacturer
ESMT
File Size
1.47 MB
Datasheet
F50D1G41LB-50YG2M-ESMT.pdf
Description
1.8V 1 Gbit SPI-NAND Flash Memory
Note
This datasheet PDF includes multiple part numbers: F50D1G41LB-66YG2ME, F50D1G41LB-50YG2M.
Please refer to the document for exact specifications by model.

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1.8V Gbit SPI-NAND Flash Memory ESMT
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