F5001 RF POWER VDMOS TRANSISTOR

Polyfet RF Devices

F5001 Description

polyfet rf devices General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

F5001 Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F5001 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 0.5 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM

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Datasheet Details

Part number: F5001
Manufacturer: Polyfet RF Devices
File Size: 37.37 KB
Datasheet: F5001_PolyfetRFDevices.pdf
Description: RF POWER VDMOS TRANSISTOR

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POWER VDMOS TRANSISTOR Polyfet RF Devices

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