EPC2815 Datasheet - EPC

EPC2815 Enhancement Mode Power Transistor

eGaN® FET DATASHEET EPC2815 Enhancement Mode Power Transistor VIRHDDDi,gSS(SOh3,N3)L4,e0Aa4VdmBWump Finish: NEW PRODUCT 95%Pb/5%Sn EPC2815 EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure and majority c.

EPC2815 Datasheet (1.23 MB)