ZXMHC6A07N8 MOSFET H-Bridge

Diodes

Description

www.DataSheet4U.com A Product Line of Diodes Incorporated ZXMHC6A07N8 60V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V(BR)DS.
This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. 2.

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Datasheet Specifications

Part number: ZXMHC6A07N8
Manufacturer: DIODES ↗
File Size: 770.09 KB
Datasheet: ZXMHC6A07N8_Diodes.pdf
Description: MOSFET H-Bridge

Features

* low on-resistance achievable with low gate drive. P1G P1S/P2S P2G Features

Applications

* DC Motor control DC-AC Inverters N1G N2G N1S/N2S Ordering information Device ZXMHC6A07N8TC Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500 Device marking ZXMHC 6A07 Issue 1.0 - March 2009 © Diodes Incorporated 1 www. diodes. com www. DataSheet4U. com ZXMHC

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ZXMHC6A07N8 MOSFET H-Bridge Diodes

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