Datasheet4U Logo Datasheet4U.com

DMT8012LSS N-CHANNEL MOSFET

DMT8012LSS Description

DMT8012LSS 80V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 80V RDS(ON) Max 16.5mΩ @ VGS = 10V 20mΩ @ VGS = 4.5V ID Max TA = +25°C 9.7A.
and Applications This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance.

DMT8012LSS Features

* 100% Unclamped Inductive Switch (UIS) Test in Production
* High Conversion Efficiency
* Low RDS(ON)
* Minimizes On-State Losses
* Low Input Capacitance
* Fast Switching Speed
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “

DMT8012LSS Applications

* This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in:
* Notebook Battery Power Management
* Loadswitches
* Backlighting
* Power Management Functions
* DC-DC Converters

📥 Download Datasheet

Preview of DMT8012LSS PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

📌 All Tags

N-CHANNEL MOSFET Diodes
Diodes DMT8012LSS-like datasheet