DMT8012LSS N-CHANNEL MOSFET

Diodes

Description

DMT8012LSS 80V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 80V RDS(ON) Max 16.5mΩ @ VGS = 10V 20mΩ @ VGS = 4.5V ID Max TA = +25°C 9.7A.
and Applications This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance.

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Datasheet Specifications

Part number: DMT8012LSS
Manufacturer: DIODES ↗
File Size: 468.74 KB
Datasheet: DMT8012LSS-Diodes.pdf
Description: N-CHANNEL MOSFET

Features

* 100% Unclamped Inductive Switch (UIS) Test in Production
* High Conversion Efficiency
* Low RDS(ON)
* Minimizes On-State Losses
* Low Input Capacitance
* Fast Switching Speed
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “

Applications

* This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in:
* Notebook Battery Power Management
* Loadswitches
* Backlighting
* Power Management Functions
* DC-DC Converters

DMT8012LSS Distributors

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DMT8012LSS N-CHANNEL MOSFET Diodes

Diodes DMT8012LSS-like datasheet