DMT3006LFG - N-CHANNEL MOSFET

Diodes

The DMT3006LFG by Diodes is a N-CHANNEL MOSFET. Below is the official datasheet preview.

📥 Download Datasheet

DMT3006LFG N-CHANNEL MOSFET by Diodes - Datasheet Preview — Official preview page of the **DMT3006LFG** N-CHANNEL MOSFET datasheet (Diodes).

Datasheet Details

Part number	DMT3006LFG
Manufacturer	DIODES
File Size	401.34 KB
Description	N-CHANNEL MOSFET
Datasheet	DMT3006LFG-Diodes.pdf
Additional preview pages of the DMT3006LFG datasheet.

DMT3006LFG Product details

Description

and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Backlighting Power Management Functions DC-DC Converters PowerDI3333-8 S Pin 1 S S G D D D D Case: PowerDI®3333-8 Case Material: Molded Plastic, "Green" Molding Compound.UL Flammability Classification Rating 94V-0 Mois

Features

Low RDS(ON).
Ensures On-State Losses are Minimized.
Excellent QGD ×RDS(ON) Product (FOM).
Advanced Technology for DC-DC Converters.
Small Form Factor Thermally Efficient Package Enables Higher Density End Products.
Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product.
100% UIS (Avalanche) Rated.
Lead-Free Finish; RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).

📁 DMT3006LFG Similar Datasheet

DMT3006LFDFQ - N-CHANNEL MOSFET (DIODES)
DMT3006LPB - Dual 30V N-CHANNEL MOSFET (DIODES)
DMT3003LFGQ - 30V N-CHANNEL MOSFET (DIODES)
DMT3009LEV - N-CHANNEL ENHANCEMENT MODE MOSFET (DIODES)
DMT3009LFVW - 30V N-Channel MOSFET (DIODES)
DMT3009LFVWQ - 30V N-CHANNEL MOSFET (DIODES)
DMT3009UDT - DUAL N-CHANNEL ENHANCEMENT MODE MOSFET (DIODES)
DMT3009UFVW - 30V N-CHANNEL MOSFET (DIODES)

Other Datasheets by Diodes

DMT3006LFDF - N-CHANNEL MOSFET
DMT3006LDK - N-Channel MOSFET
DMT3006LPS - N-CHANNEL MOSFET
DMT3002LPS - 30V N-CHANNEL MOSFET
DMT3003LFG - N-CHANNEL MOSFET
DMT3004LFG - N-CHANNEL MOSFET

Published: Aug 20, 2016 |