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DMN63D1L N-Channel MOSFET

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Description

A D VNA EN CWEPDRINONEDFWUOCRPTRMOADT IUOCNT Product Summary V(BR)DSS 60V RDS(ON) max 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA .
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high effici.

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Datasheet Specifications

Part number
DMN63D1L
Manufacturer
DIODES ↗
File Size
510.52 KB
Datasheet
DMN63D1L-Diodes.pdf
Description
N-Channel MOSFET

Features

* Low On-Resistance
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* ESD Protected Up To 2kV
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* Qualified to AEC-Q101 Standards for

Applications

* Applications
* Motor Control
* Power Management Functions

DMN63D1L Distributors

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