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BCX5616Q NPN Transistor

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Description

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This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. BVCEO > 80V. Ic.

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Features

* BVCEO > 80V
* Ic = 1A High Continuous Collector Current
* ICM = 2.0A Peak Pulse Current
* Low Saturation Voltage VCE(sat) < 500mV @ 0.5A
* Epitaxial Planar Die Construction
* Complementary PNP types: BCX5316Q
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

BCX5616Q Distributors

📁 Related Datasheet

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BCX5616Q NPN Transistor Diodes
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