BSS123 - N-Channel Enhancement Mode Field Effect Transistor

Diodes Incorporated

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Datasheet Details

Part number	BSS123
Manufacturer	DIODES Incorporated
File Size	530.32 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	BSS123_DiodesIncorporated.pdf

BSS123 Product details

Description

and Applications These N-Channel enhancement mode field effect transistors are produced using Diodes Incorporated’s proprietary, high density and advanced trench technology.These products have been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance.These products are particularly suited for low voltage, low current applications such as: Small Servo Motor Control Power MOSFET Gate Drivers Switching Applications SOT23 Mecha

Features

Low Gate Threshold Voltage.
Low Input Capacitance.
Fast Switching Speed.
Low Input/Output Leakage.
High Drain-Source Voltage Rating.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).
For automotive.

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Other Datasheets by Diodes Incorporated

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Published: Mar 23, 2005 |