DS2016 - 2k x 8 3V/5V Operation Static RAM

Dallas Semiconducotr

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Datasheet Details

Part number	DS2016
Manufacturer	Dallas Semiconducotr
File Size	162.69 KB
Description	2k x 8 3V/5V Operation Static RAM
Datasheet	DS2016_DallasSemiconducotr.pdf

DS2016 Product details

Description

A0 to A10 - Address Inputs DQ0 to DQ7 - Data Input/Output CE - Chip Enable Input WE - Write Enable Input OE - Output Enable Input VCC GND - Power Supply Input 2.7V - 5.5V - Ground DESCRIPTION The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random access memory organized as 2048 words by 8 bits using CMOS technology.The device operates from a single power supply with a voltage input between 2.7V and 5.5V.The chip enable input ( CE ) is used for d

Features

Low-power CMOS design.
Standby current - 50nA max at tA = +25°C VCC = 3.0V - 100nA max at tA = +25°C VCC = 5.5V - 1µA max at tA = +60°C VCC = 5.5V.
Full operation for VCC = 5.5V to 2.7V.
Data retention voltage = 5.5V to 2.0V.
Fast 5V access time - DS2016-100 100ns.
Reduced-speed 3V access time - DS2016-100 250ns.
Operating temperature range of -40°C to +85°C.
Full static operation.
TTL compatible inputs and outputs over voltage range of 5.5V to 2.7V.

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Published: Jan 18, 2006 |